AON1611 20v p-channel mosfet general description product summary v ds i d (at v gs =-4.5v) -4a r ds(on) (at v gs =-4.5v) < 58m w r ds(on) (at v gs =-2.5v) < 76m w r ds(on) (at v gs =-1.8v) < 98m w r ds(on) (at v gs =-1.5v) < 120m w typical esd protection hbm class 2 symbol the AON1611 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -20v pin 1 pin 1 d g s s dfn 1.6x1.6a top view bottom view s g d symbol v ds v gs i dm t j , t stg symbol t 10s steady-state c/w maximum junction-to-ambient a d 110 c thermal characteristics units maximum junction-to-ambient a c/w r q ja 56 88 70 parameter typ max w v maximum units parameter drain-source voltage -20 t a =25c v -4 -3 t a =25c t a =70c 8 gate-source voltage a continuous drain current g i d t a =70c 1.15 1.8 junction and storage temperature range -16 pulsed drain current c -55 to 150 power dissipation a p d rev 0 : june 2012 www.aosmd.com page 1 of 5
AON1611 symbol min typ max units bv dss -20 v v ds =-20v, v gs =0v -1 t j =55c -5 i gss 10 m a v gs(th) gate threshold voltage -0.3 -0.6 -0.9 v i d(on) -16 a 46 58 t j =125c 64.5 80 58 76 m w 74 98 m w 88 120 m w g fs 15 s v sd -0.66 -1 v i s -2.5 a c iss 550 pf c oss 93 pf c rss 64 pf r g 12 w q g (4.5v) 7 10 nc q gs 1 nc q gd 1.8 nc t 15 ns electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage r ds(on) static drain-source on-resistance i dss reverse transfer capacitance v gs =0v, v ds =-10v, f=1mhz switching parameters m w on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-4.5v, i d =-4a m a v ds =v gs , i d =-250 m a v ds =0v, v gs =8v gate resistance v gs =0v, v ds =0v, f=1mhz v gs =-4.5v, v ds =-10v, i d =-4a zero gate voltage drain current gate-body leakage current v ds =-5v, i d =-4a v gs =-1.5v, i d =-1a forward transconductance v gs =-2.5v, i d =-3a v gs =-1.8v, i d =-2a i s =-1a,v gs =0v gate source charge gate drain charge total gate charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters diode forward voltage t d(on) 15 ns t r 33 ns t d(off) 50 ns t f 43 ns t rr 16 ns q rr 6.5 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time i f =-4a, di/dt=100a/ m s turn-off fall time body diode reverse recovery charge i f =-4a, di/dt=100a/ m s turn-off delaytime turn-on rise time turn-on delaytime v gs =-4.5v, v ds =-10v, r l =2.5 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction temperat ure of 150 c. the value in any given application depends on the user's specific board de sign. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev 0 : june 2012 www.aosmd.com page 2 of 5
AON1611 typical electrical and thermal characteristics 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 0 20 40 60 80 100 120 0 2 4 6 8 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) v gs =-1.5v 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-1.8v i d =-2a v gs =-4.5v i d =-4a v gs =-2.5v i d =-3a v gs =-1.5v i d =-1a 25 c 125 c v ds =-5v v gs =-2.5v v gs =-4.5v 0 5 10 15 20 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-1.0v -1.5v -4.5v -2.5v -1.8v v gs =-1.8v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 20 40 60 80 100 120 140 0 1 2 3 4 5 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-4a 25 c 125 c rev 0 : june 2012 www.aosmd.com page 3 of 5
AON1611 typical electrical and thermal characteristics 0 1 2 3 4 5 0 2 4 6 8 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note h) c oss c rss v ds =-10v i d =-4a t j(max) =150 c t a =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 100ms 1s ambient (note h) 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse operating area (note f) r q ja =110 c/w rev 0 : june 2012 www.aosmd.com page 4 of 5
AON1611 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdd vgs vgs rg dut vdc vgs id vgs - + i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i rev 0 : june 2012 www.aosmd.com page 5 of 5
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